Occasion spotlights next-generation reminiscence options for functions corresponding to cloud, edge gadgets and automotive automobiles

New applied sciences and merchandise embrace HBM3E Shinebolt, LPDDR5X CAMM2 and Removable AutoSSD to speed up innovation for future computing necessities


Samsung Electronics, a world chief in superior reminiscence expertise, at the moment held its annual Memory Tech Day, showcasing industry-first improvements and new reminiscence merchandise to speed up technological developments throughout future functions — together with the cloud, edge gadgets and automotive automobiles.


Attended by about 600 prospects, companions and {industry} specialists, the occasion served as a platform for Samsung executives to increase on the corporate’s imaginative and prescient for “Reminiscence Reimagined,” protecting long-term plans to proceed its reminiscence expertise management, outlook on market developments and sustainability objectives. The corporate additionally introduced new product improvements such because the HBM3E Shinebolt, LPDDR5X CAMM2 and Removable AutoSSD.


Jung-Bae Lee, President and Head of Reminiscence Enterprise at Samsung Electronics, used his keynote tackle to increase on how Samsung will overcome the challenges of the hyperscale period by way of improvements in new transistor buildings and supplies. For instance, Samsung is presently getting ready new 3D buildings for sub-10-nanometer (nm) DRAM, permitting bigger single-chip capacities that may exceed 100 gigabits (Gb). Following its 12nm-class DRAM that started mass manufacturing in Could, 2023, Samsung is engaged on its next-generation 11nm-class DRAM, which is ready to supply the {industry}’s highest density.


NAND flash breakthroughs that can shrink cell sizes and refine channel gap etching methods are additionally in improvement, with the objective of ushering in 1,000-layer vertical NAND (V-NAND). Improvement is on monitor for Samsung’s ninth-generation V-NAND to offer the {industry}’s highest layer depend based mostly on a double-stack construction. The corporate has secured a purposeful chip for the brand new V-NAND and plans to start out mass manufacturing early subsequent 12 months.


“The brand new period of hyperscale AI has introduced the {industry} to a crossroads the place innovation and alternative intersect, presenting a time with potential for nice leaps ahead, regardless of the challenges,” mentioned Lee. “By way of infinite creativeness and relentless perseverance, we’ll proceed our market management by driving innovation and collaborating with prospects and companions to ship options that increase prospects.”



Introducing HBM3E ‘Shinebolt’


As we speak’s cloud methods are evolving to optimize compute sources, which require high-performance reminiscence to deal with excessive capability, bandwidth and digital storage capabilities. Constructing on Samsung’s experience in commercializing the {industry}’s first HBM2 and opening the HBM marketplace for high-performance computing (HPC) in 2016, the corporate at the moment revealed its next-generation HBM3E DRAM, named Shinebolt.


Samsung’s Shinebolt will energy next-generation AI functions, enhancing complete price of possession (TCO) and rushing up AI-model coaching and inference within the information heart. The HBM3E boasts a formidable velocity of 9.8 gigabits-per-second (Gbps) per pin velocity, which means it will possibly obtain switch charges exceeding as much as greater than 1.2 terabytes-per-second (TBps).


As a way to allow increased layer stacks and enhance thermal traits, Samsung has optimized its non-conductive movie (NCF) expertise to remove gaps between chip layers and maximize thermal conductivity.


Samsung’s 8H and 12H HBM3 merchandise are presently in mass manufacturing and samples for Shinebolt are transport to prospects. Leaning into its power as a complete semiconductor options supplier, the corporate additionally plans to supply a customized turnkey service that mixes next-generation HBM, superior packaging applied sciences and foundry choices collectively.


Different merchandise highlighted on the occasion embrace the 32Gb DDR5 DRAM with the {industry}’s highest capability, the {industry}’s first 32Gbps GDDR7 and the petabyte-scale PBSSD, which affords a big enhance to storage capabilities for server functions.



Redefining Edge Gadgets By way of Highly effective Type Components

As a way to course of data-intensive duties, at the moment’s AI applied sciences are transferring towards a hybrid mannequin that allocates and distributes workload amongst cloud and edge gadgets. Accordingly, Samsung launched a spread of reminiscence options that help high-performance, high-capacity, low-power and small type elements on the edge.


Along with the {industry}’s first 7.5Gbps LPDDR5X CAMM21 — which is predicted to be a real recreation changer within the next-generation PC and laptop computer DRAM market — the corporate additionally showcased its 9.6Gbps LPDDR5X DRAM, LLW2 DRAM specialised for on-device AI, next-generation Common Flash Storage (UFS), and the high-capacity Quad-Degree Cell (QLC) SSD BM9C1 for PCs.



Paving the Highway for Automotive Reminiscence Options Management

With developments in autonomous driving options, market demand can be rising for high-bandwidth, high-capacity DRAM and Shared SSDs, which share information with a number of System on Chips (SoCs).  Samsung introduced its Removable AutoSSD that permits information entry from a single SSD to a number of SoCs by way of digital storage.


The Removable AutoSSD helps sequential learn velocity of as much as 6,500 megabytes-per-second (MBps) with 4TB of capability. Because it is available in a removable type issue, the SSD makes upgrades and changes simpler for car customers and producers. Samsung additionally displayed automotive reminiscence options corresponding to high-bandwidth GDDR7 and LPDDR5X with a extra compact package deal measurement.



Expertise That Makes Expertise Sustainable

As a part of its dedication to minimizing environmental impression, Samsung underscored a wide range of improvements inside its semiconductor operations that can contribute to elevated vitality effectivity for patrons and customers.


The corporate plans to safe ultra-low-power reminiscence applied sciences that may lower energy consumption in information facilities, PCs and cell gadgets, whereas utilizing recycled supplies in transportable SSD merchandise to scale back its carbon footprint. Samsung’s next-generation options, such because the PBSSD, may even assist cut back vitality utilization for server methods as they maximize house effectivity and rack capability.


Whereas collaborating with stakeholders throughout the semiconductor worth chain, together with prospects and companions, Samsung’s semiconductor enterprise will proceed to play an lively position in tackling international local weather points by way of its sustainability initiative, “expertise that makes expertise sustainable.”


To be taught extra about Samsung Semiconductor’s options and Samsung Reminiscence Tech Day 2023, please go to: The recap of the occasion might be posted at a later date.



1 CAMM: Compression Hooked up Reminiscence Module.
2 LLW: Low Latency Extensive I/O.

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